Influence of γ-radiation doses on the properties of TeOx: (x=2–3) thin film
The influence of γ-ray doses (10–50 Gy) on the optical and electrical properties of radio-frequency sputtered tellurium dioxide (TeOx) thin film was studied. The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O2) was x=2 and 3,...
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| Veröffentlicht in: | Journal of applied physics 2007-08, Vol.102 (4) |
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| container_title | Journal of applied physics |
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| creator | Dewan, Namrata Sreenivas, K. Gupta, Vinay |
| description | The influence of γ-ray doses (10–50 Gy) on the optical and electrical properties of radio-frequency sputtered tellurium dioxide (TeOx) thin film was studied. The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O2) was x=2 and 3, respectively. TeO3 films were found to be highly sensitive to the γ-radiation doses and the value of optical band gap decrease from 4.18 to 3.56 eV with increasing radiation dose from 10 to 50 Gy. Current-voltage characteristics of the films showed an increase in the value of conductivity with increasing radiation doses. Monotonic decrease in the values of dielectric constant for the deposited films with increase in radiation dose was observed. The effect of γ-ray doses on the properties of TeOx film has been correlated with the rearrangement of the bipyramidal structure of amorphous TeOx thin film. |
| doi_str_mv | 10.1063/1.2769778 |
| format | Article |
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The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O2) was x=2 and 3, respectively. TeO3 films were found to be highly sensitive to the γ-radiation doses and the value of optical band gap decrease from 4.18 to 3.56 eV with increasing radiation dose from 10 to 50 Gy. Current-voltage characteristics of the films showed an increase in the value of conductivity with increasing radiation doses. Monotonic decrease in the values of dielectric constant for the deposited films with increase in radiation dose was observed. 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The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O2) was x=2 and 3, respectively. TeO3 films were found to be highly sensitive to the γ-radiation doses and the value of optical band gap decrease from 4.18 to 3.56 eV with increasing radiation dose from 10 to 50 Gy. Current-voltage characteristics of the films showed an increase in the value of conductivity with increasing radiation doses. Monotonic decrease in the values of dielectric constant for the deposited films with increase in radiation dose was observed. 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The composition of the as-deposited TeOx films deposited under 25% oxygen and 100% oxygen in the sputtering gas mixture (Ar+O2) was x=2 and 3, respectively. TeO3 films were found to be highly sensitive to the γ-radiation doses and the value of optical band gap decrease from 4.18 to 3.56 eV with increasing radiation dose from 10 to 50 Gy. Current-voltage characteristics of the films showed an increase in the value of conductivity with increasing radiation doses. Monotonic decrease in the values of dielectric constant for the deposited films with increase in radiation dose was observed. The effect of γ-ray doses on the properties of TeOx film has been correlated with the rearrangement of the bipyramidal structure of amorphous TeOx thin film.</abstract><doi>10.1063/1.2769778</doi></addata></record> |
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| ispartof | Journal of applied physics, 2007-08, Vol.102 (4) |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Influence of γ-radiation doses on the properties of TeOx: (x=2–3) thin film |
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