Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

The effect of Ar plasma treatment on amorphous indium gallium zinc oxide ( a -IGZO) thin films was investigated. The net electron carrier concentration ( 10 20 - 10 21 cm − 3 ) of the a -IGZO thin films dramatically increased upon their exposure to the Ar plasma compared to that ( 10 14 cm − 3 ) of...

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Veröffentlicht in:	Applied physics letters 2007-06, Vol.90 (26), p.262106-262106-3
Hauptverfasser:	Park, Jin-Seong, Jeong, Jae Kyeong, Mo, Yeon-Gon, Kim, Hye Dong, Kim, Sun-Il
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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