Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Engineered dielectrics combined with compatible metal electrodes are important materials science approaches to scale three-dimensional trench dynamic random access memory (DRAM) cells. Highly insulating dielectrics with high dielectric constants were engineered in this study on TiN metal electrodes...

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Veröffentlicht in:	Journal of applied physics 2007-07, Vol.102 (1)
Hauptverfasser:	Schroeder, T., Lupina, G., Sohal, R., Lippert, G., Wenger, Ch, Seifarth, O., Tallarida, M., Schmeisser, D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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