Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices

The authors report the epitaxial growth of cubic TaC thin films on 4H-SiC (0001) substrates by pulsed laser deposition and their recrystallization kinetics. The growth temperature for epitaxy was found to be 1000°C. The activation energy for the recrystallization was 1.5eV. High temperature annealin...

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Veröffentlicht in:	Applied physics letters 2007-06, Vol.90 (24)
Hauptverfasser:	Vispute, R. D., Hullavarad, S., Luykx, A., Young, D., Dhar, S., Venkatesan, T., Jones, K. A., Zheleva, T. S., Ervin, M., Derenge, M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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