Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors

Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This be...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 2007-06, Vol.90 (25)
Hauptverfasser:	Marinella, M. J., Schroder, D. K., Isaacs-Smith, T., Ahyi, A. C., Williams, J. R., Chung, G. Y., Wan, J. W., Loboda, M. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	25
container_start_page
container_title	Applied physics letters
container_volume	90
creator	Marinella, M. J. Schroder, D. K. Isaacs-Smith, T. Ahyi, A. C. Williams, J. R. Chung, G. Y. Wan, J. W. Loboda, M. J.
description	Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This behavior is consistent with an effect seen in Si∕SiO2 devices known as negative bias temperature instability. A portion of the lifetime degradation caused by this effect can be recovered by removing the negative bias as well as by positively biasing the device.
doi_str_mv	10.1063/1.2748327
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2748327</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2748327</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-bae08332e8f77d191ae89b27d0598877926f203d2d9916aa21654b93587ab8843</originalsourceid><addsrcrecordid>eNotkL1OwzAURi0EEqEw8AZeGVJ87SS2R1QVilSJAZjDjXODjPJT2W5F356gdvrOt5zhMHYPYgmiUo-wlLowSuoLloHQOlcA5pJlQgiVV7aEa3YT4898S6lUxr7WB9_S6IhPHR_pG5M_EG88Rp5o2FHAtA_E_RgTNr736TgzLzb5u1_xgRL2fPqdDTzS4N00tnuXpsAd7tD5meItu-qwj3R33gX7fF5_rDb59u3ldfW0zZ20ZcobJGGUkmQ6rVuwgGRsI3UrSmuM1lZWnRSqla21UCFKqMqisao0GhtjCrVgDyevC1OMgbp6F_yA4ViDqP_T1FCf06g_taBV9Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Marinella, M. J. ; Schroder, D. K. ; Isaacs-Smith, T. ; Ahyi, A. C. ; Williams, J. R. ; Chung, G. Y. ; Wan, J. W. ; Loboda, M. J.</creator><creatorcontrib>Marinella, M. J. ; Schroder, D. K. ; Isaacs-Smith, T. ; Ahyi, A. C. ; Williams, J. R. ; Chung, G. Y. ; Wan, J. W. ; Loboda, M. J.</creatorcontrib><description>Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This behavior is consistent with an effect seen in Si∕SiO2 devices known as negative bias temperature instability. A portion of the lifetime degradation caused by this effect can be recovered by removing the negative bias as well as by positively biasing the device.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2748327</identifier><language>eng</language><ispartof>Applied physics letters, 2007-06, Vol.90 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-bae08332e8f77d191ae89b27d0598877926f203d2d9916aa21654b93587ab8843</citedby><cites>FETCH-LOGICAL-c295t-bae08332e8f77d191ae89b27d0598877926f203d2d9916aa21654b93587ab8843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Marinella, M. J.</creatorcontrib><creatorcontrib>Schroder, D. K.</creatorcontrib><creatorcontrib>Isaacs-Smith, T.</creatorcontrib><creatorcontrib>Ahyi, A. C.</creatorcontrib><creatorcontrib>Williams, J. R.</creatorcontrib><creatorcontrib>Chung, G. Y.</creatorcontrib><creatorcontrib>Wan, J. W.</creatorcontrib><creatorcontrib>Loboda, M. J.</creatorcontrib><title>Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors</title><title>Applied physics letters</title><description>Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This behavior is consistent with an effect seen in Si∕SiO2 devices known as negative bias temperature instability. A portion of the lifetime degradation caused by this effect can be recovered by removing the negative bias as well as by positively biasing the device.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAURi0EEqEw8AZeGVJ87SS2R1QVilSJAZjDjXODjPJT2W5F356gdvrOt5zhMHYPYgmiUo-wlLowSuoLloHQOlcA5pJlQgiVV7aEa3YT4898S6lUxr7WB9_S6IhPHR_pG5M_EG88Rp5o2FHAtA_E_RgTNr736TgzLzb5u1_xgRL2fPqdDTzS4N00tnuXpsAd7tD5meItu-qwj3R33gX7fF5_rDb59u3ldfW0zZ20ZcobJGGUkmQ6rVuwgGRsI3UrSmuM1lZWnRSqla21UCFKqMqisao0GhtjCrVgDyevC1OMgbp6F_yA4ViDqP_T1FCf06g_taBV9Q</recordid><startdate>20070618</startdate><enddate>20070618</enddate><creator>Marinella, M. J.</creator><creator>Schroder, D. K.</creator><creator>Isaacs-Smith, T.</creator><creator>Ahyi, A. C.</creator><creator>Williams, J. R.</creator><creator>Chung, G. Y.</creator><creator>Wan, J. W.</creator><creator>Loboda, M. J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070618</creationdate><title>Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors</title><author>Marinella, M. J. ; Schroder, D. K. ; Isaacs-Smith, T. ; Ahyi, A. C. ; Williams, J. R. ; Chung, G. Y. ; Wan, J. W. ; Loboda, M. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-bae08332e8f77d191ae89b27d0598877926f203d2d9916aa21654b93587ab8843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Marinella, M. J.</creatorcontrib><creatorcontrib>Schroder, D. K.</creatorcontrib><creatorcontrib>Isaacs-Smith, T.</creatorcontrib><creatorcontrib>Ahyi, A. C.</creatorcontrib><creatorcontrib>Williams, J. R.</creatorcontrib><creatorcontrib>Chung, G. Y.</creatorcontrib><creatorcontrib>Wan, J. W.</creatorcontrib><creatorcontrib>Loboda, M. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Marinella, M. J.</au><au>Schroder, D. K.</au><au>Isaacs-Smith, T.</au><au>Ahyi, A. C.</au><au>Williams, J. R.</au><au>Chung, G. Y.</au><au>Wan, J. W.</au><au>Loboda, M. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors</atitle><jtitle>Applied physics letters</jtitle><date>2007-06-18</date><risdate>2007</risdate><volume>90</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS capacitor technique. A decrease in lifetime and increase in interface state density occurs when the devices are negatively biased at 400°C. This behavior is consistent with an effect seen in Si∕SiO2 devices known as negative bias temperature instability. A portion of the lifetime degradation caused by this effect can be recovered by removing the negative bias as well as by positively biasing the device.</abstract><doi>10.1063/1.2748327</doi></addata></record>
fulltext	fulltext
identifier	ISSN: 0003-6951
ispartof	Applied physics letters, 2007-06, Vol.90 (25)
issn	0003-6951 1077-3118
language	eng
recordid	cdi_crossref_primary_10_1063_1_2748327
source	AIP Journals Complete; AIP Digital Archive
title	Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T20%3A58%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evidence%20of%20negative%20bias%20temperature%20instability%20in%204H-SiC%20metal%20oxide%20semiconductor%20capacitors&rft.jtitle=Applied%20physics%20letters&rft.au=Marinella,%20M.%20J.&rft.date=2007-06-18&rft.volume=90&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2748327&rft_dat=%3Ccrossref%3E10_1063_1_2748327%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true