High-performance bottom-contact devices based on an air-stable n -type organic semiconductor N , N -bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide

N , N -bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6 × 10 − 2 cm 2 V − 1 s − 1 , the threshold voltage ( V T ) was + 5.5 V , and the on/off current ratio was 8.6 × 10 5 . Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift ( Δ V T ) was verified by gate bias stress measurements. A prototype compound, N , N -bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure.