Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts

We use scanning tunneling microscopy to investigate the atomic-scale process of hydrogen desorption from H:Si(001) with a 25 keV scanning electron microscope (SEM) electron beam and characterize the rate of desorption, contaminant deposition, and desorption straggle. We then demonstrate the effectiveness of a SEM to pattern a hydrogen resist for device fabrication by showing that it is compatible with phosphine ( PH 3 ) dosing to form large ( 4 × 4 μ m 2 ) buried planar conducting regions in silicon.