Stress-induced width-dependent degradation of low-temperature polycrystalline silicon thin-film transistor

This study characterizes the stress-induced subthreshold degradation effect in low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) formed using sequential lateral solidified (SLS) crystallization on a glass substrate. The SLS process is adopted to improve carrier mobility by in...

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Veröffentlicht in:	Applied physics letters 2007-04, Vol.90 (18), p.183502-183502-3
Hauptverfasser:	Hsieh, Szu-I, Liang, Hsing-Yi, Lin, Chrong-Jung, King, Ya-Chin, Chen, Hung-Tse
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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