Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching

Two-dimensional silica colloidal crystal template is used to create metal nanohole arrays on a silicon surface, which enables the controlled fabrication of aligned silicon nanowire (SiNW) arrays via metal catalytic etching. By varying the size of silica colloidal crystals, aligned arrays of SiNWs wi...

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Veröffentlicht in:Applied physics letters 2007-04, Vol.90 (16), p.163123-163123-3
Hauptverfasser: Peng, Kuiqing, Zhang, Mingliang, Lu, Aijiang, Wong, Ning-Bew, Zhang, Ruiqin, Lee, Shuit-Tong
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container_issue 16
container_start_page 163123
container_title Applied physics letters
container_volume 90
creator Peng, Kuiqing
Zhang, Mingliang
Lu, Aijiang
Wong, Ning-Bew
Zhang, Ruiqin
Lee, Shuit-Tong
description Two-dimensional silica colloidal crystal template is used to create metal nanohole arrays on a silicon surface, which enables the controlled fabrication of aligned silicon nanowire (SiNW) arrays via metal catalytic etching. By varying the size of silica colloidal crystals, aligned arrays of SiNWs with desirable diameter and density could be obtained. The formation of ordered SiNW arrays is due to selective and anisotropic etching of silicon induced by the silver pattern. The orientation of SiNW arrays is influenced by silver movement in silicon, and the wire axes are primarily along the ⟨100⟩ direction.
doi_str_mv 10.1063/1.2724897
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2724897</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-970c71a8303eaea619de3a7112957d223c98fcb371c1cc83da25b876f51e34493</originalsourceid><addsrcrecordid>eNp1kEFLAzEQhYMoWKsH_0GuHrZmMt3N5iJI0SoUeqnnZZpku5FttiSr0n_v1u7V0_CGjwfvY-wexAxEgY8wk0rOS60u2ASEUhkClJdsIoTArNA5XLOblD6HmEvECduso3XRWZ58600XeKDQ_fjoOMVIx8S_Pf390qEZON76vul2kQ7NkVOwfO96ajMf7JcZSlxvGh92t-yqpja5u_FO2cfry2bxlq3Wy_fF8yozmIs-00oYBVSiQEeOCtDWISkAqXNlpUSjy9psUYEBY0q0JPNtqYo6B4fzucYpezj3mtilFF1dHaLfUzxWIKqTjgqqUcfAPp3ZZHxPve_C__DopBqdVKf9-AtcLmhi</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Peng, Kuiqing ; Zhang, Mingliang ; Lu, Aijiang ; Wong, Ning-Bew ; Zhang, Ruiqin ; Lee, Shuit-Tong</creator><creatorcontrib>Peng, Kuiqing ; Zhang, Mingliang ; Lu, Aijiang ; Wong, Ning-Bew ; Zhang, Ruiqin ; Lee, Shuit-Tong</creatorcontrib><description>Two-dimensional silica colloidal crystal template is used to create metal nanohole arrays on a silicon surface, which enables the controlled fabrication of aligned silicon nanowire (SiNW) arrays via metal catalytic etching. By varying the size of silica colloidal crystals, aligned arrays of SiNWs with desirable diameter and density could be obtained. The formation of ordered SiNW arrays is due to selective and anisotropic etching of silicon induced by the silver pattern. The orientation of SiNW arrays is influenced by silver movement in silicon, and the wire axes are primarily along the ⟨100⟩ direction.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2724897</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-04, Vol.90 (16), p.163123-163123-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-970c71a8303eaea619de3a7112957d223c98fcb371c1cc83da25b876f51e34493</citedby><cites>FETCH-LOGICAL-c350t-970c71a8303eaea619de3a7112957d223c98fcb371c1cc83da25b876f51e34493</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2724897$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Peng, Kuiqing</creatorcontrib><creatorcontrib>Zhang, Mingliang</creatorcontrib><creatorcontrib>Lu, Aijiang</creatorcontrib><creatorcontrib>Wong, Ning-Bew</creatorcontrib><creatorcontrib>Zhang, Ruiqin</creatorcontrib><creatorcontrib>Lee, Shuit-Tong</creatorcontrib><title>Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching</title><title>Applied physics letters</title><description>Two-dimensional silica colloidal crystal template is used to create metal nanohole arrays on a silicon surface, which enables the controlled fabrication of aligned silicon nanowire (SiNW) arrays via metal catalytic etching. By varying the size of silica colloidal crystals, aligned arrays of SiNWs with desirable diameter and density could be obtained. The formation of ordered SiNW arrays is due to selective and anisotropic etching of silicon induced by the silver pattern. The orientation of SiNW arrays is influenced by silver movement in silicon, and the wire axes are primarily along the ⟨100⟩ direction.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKsH_0GuHrZmMt3N5iJI0SoUeqnnZZpku5FttiSr0n_v1u7V0_CGjwfvY-wexAxEgY8wk0rOS60u2ASEUhkClJdsIoTArNA5XLOblD6HmEvECduso3XRWZ58600XeKDQ_fjoOMVIx8S_Pf390qEZON76vul2kQ7NkVOwfO96ajMf7JcZSlxvGh92t-yqpja5u_FO2cfry2bxlq3Wy_fF8yozmIs-00oYBVSiQEeOCtDWISkAqXNlpUSjy9psUYEBY0q0JPNtqYo6B4fzucYpezj3mtilFF1dHaLfUzxWIKqTjgqqUcfAPp3ZZHxPve_C__DopBqdVKf9-AtcLmhi</recordid><startdate>20070416</startdate><enddate>20070416</enddate><creator>Peng, Kuiqing</creator><creator>Zhang, Mingliang</creator><creator>Lu, Aijiang</creator><creator>Wong, Ning-Bew</creator><creator>Zhang, Ruiqin</creator><creator>Lee, Shuit-Tong</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070416</creationdate><title>Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching</title><author>Peng, Kuiqing ; Zhang, Mingliang ; Lu, Aijiang ; Wong, Ning-Bew ; Zhang, Ruiqin ; Lee, Shuit-Tong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-970c71a8303eaea619de3a7112957d223c98fcb371c1cc83da25b876f51e34493</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Peng, Kuiqing</creatorcontrib><creatorcontrib>Zhang, Mingliang</creatorcontrib><creatorcontrib>Lu, Aijiang</creatorcontrib><creatorcontrib>Wong, Ning-Bew</creatorcontrib><creatorcontrib>Zhang, Ruiqin</creatorcontrib><creatorcontrib>Lee, Shuit-Tong</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Peng, Kuiqing</au><au>Zhang, Mingliang</au><au>Lu, Aijiang</au><au>Wong, Ning-Bew</au><au>Zhang, Ruiqin</au><au>Lee, Shuit-Tong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching</atitle><jtitle>Applied physics letters</jtitle><date>2007-04-16</date><risdate>2007</risdate><volume>90</volume><issue>16</issue><spage>163123</spage><epage>163123-3</epage><pages>163123-163123-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Two-dimensional silica colloidal crystal template is used to create metal nanohole arrays on a silicon surface, which enables the controlled fabrication of aligned silicon nanowire (SiNW) arrays via metal catalytic etching. By varying the size of silica colloidal crystals, aligned arrays of SiNWs with desirable diameter and density could be obtained. The formation of ordered SiNW arrays is due to selective and anisotropic etching of silicon induced by the silver pattern. The orientation of SiNW arrays is influenced by silver movement in silicon, and the wire axes are primarily along the ⟨100⟩ direction.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2724897</doi></addata></record>
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title Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T14%3A30%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ordered%20silicon%20nanowire%20arrays%20via%20nanosphere%20lithography%20and%20metal-induced%20etching&rft.jtitle=Applied%20physics%20letters&rft.au=Peng,%20Kuiqing&rft.date=2007-04-16&rft.volume=90&rft.issue=16&rft.spage=163123&rft.epage=163123-3&rft.pages=163123-163123-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2724897&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true