Nanometer-scale material contrast imaging with a near-field microwave microscope

The authors report topography-free material contrast imaging on a nanofabricated boron-doped silicon sample measured with a near-field scanning microwave microscope over a broad frequency range. The boron doping was performed using the focus ion beam technique on a silicon wafer with nominal resisti...

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Veröffentlicht in:	Applied physics letters 2007-04, Vol.90 (14), p.143106-143106-3
Hauptverfasser:	Imtiaz, Atif, Anlage, Steven M., Barry, John D., Melngailis, John
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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