Electrical characteristics and interface structure of HfAlO∕SiON∕Si(001) stacks

The electrical characteristics of RuO2∕HfAlO∕SiON∕Si(001) capacitors prepared by thermal nitridation of the Si substrate previously to HfAlO ultrathin film deposition were determined. A dielectric constant of 19 and a gate current density of 67mA∕cm2 for an equivalent oxide thickness of 1.1nm have b...

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Veröffentlicht in:	Applied physics letters 2007-03, Vol.90 (12)
Hauptverfasser:	Edon, V., Li, Z., Hugon, M.-C., Agius, B., Krug, C., Baumvol, I. J. R., Durand, O., Eypert, C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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