Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer

Pentacene films grown on sol-gel silica dielectrics showed a significant enhancement in field effect mobility, threshold voltages, and subthreshold swings. This letter investigates the contributing factors for the enhanced device characteristics. The smoother and more hydrophobic film surfaces of so...

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Veröffentlicht in:	Applied physics letters 2007-03, Vol.90 (12), p.122112-122112-3
Hauptverfasser:	Cahyadi, T., Tey, J. N., Mhaisalkar, S. G., Boey, F., Rao, V. R., Lal, R., Huang, Z. H., Qi, G. J., Chen, Z.-K., Ng, C. M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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