Characterization of Mn-doped 3C-SiC prepared by ion implantation

Characterization of Mn-doped 3C-SiC prepared by ion implantation

The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1×1016cm−2 into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmis...

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Veröffentlicht in:Journal of applied physics 2007-05, Vol.101 (9)
Hauptverfasser: Takano, Fumiyoshi, Wang, Wenhong, Akinaga, Hiro, Ofuchi, Hironori, Hishiki, Shigeomi, Ohshima, Takeshi
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container_issue 9
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container_title Journal of applied physics
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creator Takano, Fumiyoshi
Wang, Wenhong
Akinaga, Hiro
Ofuchi, Hironori
Hishiki, Shigeomi
Ohshima, Takeshi
description The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1×1016cm−2 into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmission magnetic circular dichroism and magnetization investigations demonstrated a ferromagnetic behavior below 245K. The lattice relaxation induced by the postannealing is considered a possible mechanism of this outcome.
doi_str_mv 10.1063/1.2709749
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title Characterization of Mn-doped 3C-SiC prepared by ion implantation
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