Characterization of Mn-doped 3C-SiC prepared by ion implantation
The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1×1016cm−2 into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmis...
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| Veröffentlicht in: | Journal of applied physics 2007-05, Vol.101 (9) |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The characterization of Mn-doped 3C-SiC prepared by ion implantation is reported. Implantation of Mn ions at a dose of 1×1016cm−2 into a 3C-SiC homoepitaxial wafer was carried out. High temperature annealing following the implantation process was found to enhance the ferromagnetic ordering. Transmission magnetic circular dichroism and magnetization investigations demonstrated a ferromagnetic behavior below 245K. The lattice relaxation induced by the postannealing is considered a possible mechanism of this outcome. |
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| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.2709749 |