Theoretical and experimental investigation of valence band offsets for direct silicon bond hybrid orientation technology
Direct silicon bonding (DSB) for hybrid orientation technology has recently generated a lot of interest due to the significant performance enhancements reported for p-channel metal oxide semiconductor devices fabricated on alternative substrate orientations. This letter reports on the experimental o...
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Veröffentlicht in: | Applied physics letters 2007-01, Vol.90 (4) |
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Hauptverfasser: | , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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