Resistance random access memory switching mechanism

The properties of Pr 0.7 Ca 0.3 Mn O 3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is conclud...

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Veröffentlicht in:	Journal of applied physics 2007-01, Vol.101 (2), p.024517-024517-8
Hauptverfasser:	Hsu, Sheng T., Li, Tingkai, Awaya, Nobuyoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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