Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]....

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Veröffentlicht in:Applied physics letters 2007-01, Vol.90 (2)
Hauptverfasser: Suh, Dong-Seok, Lee, Eunhye, Kim, Kijoon H. P., Noh, Jin-Seo, Shin, Woong-Chul, Kang, Youn-Seon, Kim, Cheolkyu, Khang, Yoonho, Yoon, H. R., Jo, W.
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container_title Applied physics letters
container_volume 90
creator Suh, Dong-Seok
Lee, Eunhye
Kim, Kijoon H. P.
Noh, Jin-Seo
Shin, Woong-Chul
Kang, Youn-Seon
Kim, Cheolkyu
Khang, Yoonho
Yoon, H. R.
Jo, W.
description Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.
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title Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications
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