High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method
Optical characteristics of high-efficiency violet-blue, blue, and green light emissions in In x Ga 1 − x N quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and 459 nm above the main peaks at 430, 463, and 509 nm with an e...
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| Veröffentlicht in: | Applied physics letters 2007-01, Vol.90 (1), p.011912-011912-3 |
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| container_title | Applied physics letters |
| container_volume | 90 |
| creator | Cho, Yong-Hoon Sun, Y. P. Kim, H. M. Kang, T. W. Suh, E.-K. Lee, H. J. Choi, R. J. Hahn, Y. B. |
| description | Optical characteristics of high-efficiency violet-blue, blue, and green light emissions in
In
x
Ga
1
−
x
N
quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and
459
nm
above the main peaks at 430, 463, and
509
nm
with an effective carrier transfer from the higher to main peak sides is characteristic of these structures with various In contents of
x
<
0.2
,
0.2
<
x
<
0.3
, and
x
>
0.3
, respectively. Robust carrier localization by uniform, small-size, and high-density phase segregation plays an important role in maintaining high efficiencies over a wide range of In contents in graded-In-content InGaN QW structures. |
| doi_str_mv | 10.1063/1.2430401 |
| format | Article |
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In
x
Ga
1
−
x
N
quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and
459
nm
above the main peaks at 430, 463, and
509
nm
with an effective carrier transfer from the higher to main peak sides is characteristic of these structures with various In contents of
x
<
0.2
,
0.2
<
x
<
0.3
, and
x
>
0.3
, respectively. Robust carrier localization by uniform, small-size, and high-density phase segregation plays an important role in maintaining high efficiencies over a wide range of In contents in graded-In-content InGaN QW structures.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2430401</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-01, Vol.90 (1), p.011912-011912-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-af7950a5f703dc305003ef28adcab6e35c8e4cdae5ccb672bb63f14dde66ff433</citedby><cites>FETCH-LOGICAL-c350t-af7950a5f703dc305003ef28adcab6e35c8e4cdae5ccb672bb63f14dde66ff433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2430401$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><creatorcontrib>Sun, Y. P.</creatorcontrib><creatorcontrib>Kim, H. M.</creatorcontrib><creatorcontrib>Kang, T. W.</creatorcontrib><creatorcontrib>Suh, E.-K.</creatorcontrib><creatorcontrib>Lee, H. J.</creatorcontrib><creatorcontrib>Choi, R. J.</creatorcontrib><creatorcontrib>Hahn, Y. B.</creatorcontrib><title>High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method</title><title>Applied physics letters</title><description>Optical characteristics of high-efficiency violet-blue, blue, and green light emissions in
In
x
Ga
1
−
x
N
quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and
459
nm
above the main peaks at 430, 463, and
509
nm
with an effective carrier transfer from the higher to main peak sides is characteristic of these structures with various In contents of
x
<
0.2
,
0.2
<
x
<
0.3
, and
x
>
0.3
, respectively. Robust carrier localization by uniform, small-size, and high-density phase segregation plays an important role in maintaining high efficiencies over a wide range of In contents in graded-In-content InGaN QW structures.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKsH3yBXD6nJZrPbXgQp2haKXvS8ZJNJG9lNapK19Cl85W7p4s3TzMA3P_wfQveMThgt-CObZDmnOWUXaMRoWRLO2PQSjSilnBQzwa7RTYxf_Skyzkfod2k3W_zdSZe6FoMxVllw6oC9wT_WN5BI3XSAk8ebAOBw0_MJQ2tjtN5h6_DKLeTbX8QemgbHFDqVugCx__J7h-tDv0gNmlinbdcS5V0Cl_AueGMb6za4hbT1-hZdGdlEuBvmGH2-vnzMl2T9vljNn9dEcUETkaacCSqFKSnXilPR1wOTTaVWsi6ACzWFXGkJQqm6KLO6LrhhudZQFMbknI_RwzlXBR9jAFPtgm1lOFSMVieTFasGkz37dGajskmmvvb_8ElnNbioBp38CGuAf5s</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Cho, Yong-Hoon</creator><creator>Sun, Y. P.</creator><creator>Kim, H. M.</creator><creator>Kang, T. W.</creator><creator>Suh, E.-K.</creator><creator>Lee, H. J.</creator><creator>Choi, R. J.</creator><creator>Hahn, Y. B.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070101</creationdate><title>High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method</title><author>Cho, Yong-Hoon ; Sun, Y. P. ; Kim, H. M. ; Kang, T. W. ; Suh, E.-K. ; Lee, H. J. ; Choi, R. J. ; Hahn, Y. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-af7950a5f703dc305003ef28adcab6e35c8e4cdae5ccb672bb63f14dde66ff433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, Yong-Hoon</creatorcontrib><creatorcontrib>Sun, Y. P.</creatorcontrib><creatorcontrib>Kim, H. M.</creatorcontrib><creatorcontrib>Kang, T. W.</creatorcontrib><creatorcontrib>Suh, E.-K.</creatorcontrib><creatorcontrib>Lee, H. J.</creatorcontrib><creatorcontrib>Choi, R. J.</creatorcontrib><creatorcontrib>Hahn, Y. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, Yong-Hoon</au><au>Sun, Y. P.</au><au>Kim, H. M.</au><au>Kang, T. W.</au><au>Suh, E.-K.</au><au>Lee, H. J.</au><au>Choi, R. J.</au><au>Hahn, Y. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method</atitle><jtitle>Applied physics letters</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>90</volume><issue>1</issue><spage>011912</spage><epage>011912-3</epage><pages>011912-011912-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Optical characteristics of high-efficiency violet-blue, blue, and green light emissions in
In
x
Ga
1
−
x
N
quantum well (QW) structures with graded In content are investigated. Appearance of additional higher energy peaks at 410, 429, and
459
nm
above the main peaks at 430, 463, and
509
nm
with an effective carrier transfer from the higher to main peak sides is characteristic of these structures with various In contents of
x
<
0.2
,
0.2
<
x
<
0.3
, and
x
>
0.3
, respectively. Robust carrier localization by uniform, small-size, and high-density phase segregation plays an important role in maintaining high efficiencies over a wide range of In contents in graded-In-content InGaN QW structures.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2430401</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-01, Vol.90 (1), p.011912-011912-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2430401 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | High quantum efficiency of violet-blue to green light emission in InGaN quantum well structures grown by graded-indium-content profiling method |
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