Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry
The authors report the spin diffusion length at 4.2 K in sputtered Ni of l s f Ni = 21 ± 2 nm , and spin-dependent scattering parameters in Ni and at Ni ∕ Cu interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased...
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| Veröffentlicht in: | Applied physics letters 2007-01, Vol.90 (1), p.012101-012101-3 |
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| container_title | Applied physics letters |
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| creator | Moreau, Charles E. Moraru, Ion C. Birge, Norman O. Pratt, William P. |
| description | The authors report the spin diffusion length at
4.2
K
in sputtered Ni of
l
s
f
Ni
=
21
±
2
nm
, and spin-dependent scattering parameters in Ni and at
Ni
∕
Cu
interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni "spoiler" layer into a Py/Cu/Py spin valve. Fits to data of
A
Δ
R
vs Ni thickness using Valet-Fert theory [
Phys. Rev. B
48
,
7099
(
1993
)
] show good agreement between fit parameters for both sample geometries. |
| doi_str_mv | 10.1063/1.2424437 |
| format | Article |
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4.2
K
in sputtered Ni of
l
s
f
Ni
=
21
±
2
nm
, and spin-dependent scattering parameters in Ni and at
Ni
∕
Cu
interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni "spoiler" layer into a Py/Cu/Py spin valve. Fits to data of
A
Δ
R
vs Ni thickness using Valet-Fert theory [
Phys. Rev. B
48
,
7099
(
1993
)
] show good agreement between fit parameters for both sample geometries.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2424437</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2007-01, Vol.90 (1), p.012101-012101-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-c89a500c17bb08ddc3708b12a494c757fd1cd9d25133ed901ac6e7b76ab08b323</citedby><cites>FETCH-LOGICAL-c349t-c89a500c17bb08ddc3708b12a494c757fd1cd9d25133ed901ac6e7b76ab08b323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2424437$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Moreau, Charles E.</creatorcontrib><creatorcontrib>Moraru, Ion C.</creatorcontrib><creatorcontrib>Birge, Norman O.</creatorcontrib><creatorcontrib>Pratt, William P.</creatorcontrib><title>Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry</title><title>Applied physics letters</title><description>The authors report the spin diffusion length at
4.2
K
in sputtered Ni of
l
s
f
Ni
=
21
±
2
nm
, and spin-dependent scattering parameters in Ni and at
Ni
∕
Cu
interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni "spoiler" layer into a Py/Cu/Py spin valve. Fits to data of
A
Δ
R
vs Ni thickness using Valet-Fert theory [
Phys. Rev. B
48
,
7099
(
1993
)
] show good agreement between fit parameters for both sample geometries.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqUw8A-8MqTYcRInAwOq-JIKLDBbjn1OjRKnsp2K_ntc2oGF6XR3j17pfRC6pmRBScVu6SIv8qJg_ATNKOE8Y5TWp2hGCGFZ1ZT0HF2E8JXWMmdshtwryDB5GMBFPBocNtZhbY2Zgh0d7sF1cY3TLWymGMGDxm8WG9sPASfEdVimFygrewzfai1dB1lrZUjgb9ZW9lvAHYwDRL-7RGdG9gGujnOOPh8fPpbP2er96WV5v8oUK5qYqbqRJSGK8rYltdaKcVK3NJdFUyhecqOp0o3OS8oY6IZQqSrgLa9kwluWszm6OeQqP4bgwYiNt4P0O0GJ2IsSVBxFJfbuwAZlo4yp9v_wH1tiNGLfkP0AilRxvQ</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Moreau, Charles E.</creator><creator>Moraru, Ion C.</creator><creator>Birge, Norman O.</creator><creator>Pratt, William P.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070101</creationdate><title>Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry</title><author>Moreau, Charles E. ; Moraru, Ion C. ; Birge, Norman O. ; Pratt, William P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-c89a500c17bb08ddc3708b12a494c757fd1cd9d25133ed901ac6e7b76ab08b323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moreau, Charles E.</creatorcontrib><creatorcontrib>Moraru, Ion C.</creatorcontrib><creatorcontrib>Birge, Norman O.</creatorcontrib><creatorcontrib>Pratt, William P.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moreau, Charles E.</au><au>Moraru, Ion C.</au><au>Birge, Norman O.</au><au>Pratt, William P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry</atitle><jtitle>Applied physics letters</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>90</volume><issue>1</issue><spage>012101</spage><epage>012101-3</epage><pages>012101-012101-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The authors report the spin diffusion length at
4.2
K
in sputtered Ni of
l
s
f
Ni
=
21
±
2
nm
, and spin-dependent scattering parameters in Ni and at
Ni
∕
Cu
interfaces. They have employed current perpendicular to plane giant magnetoresistance in both a traditional and an alternative exchange-biased spin valve geometry that inserts a Ni "spoiler" layer into a Py/Cu/Py spin valve. Fits to data of
A
Δ
R
vs Ni thickness using Valet-Fert theory [
Phys. Rev. B
48
,
7099
(
1993
)
] show good agreement between fit parameters for both sample geometries.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2424437</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2007-01, Vol.90 (1), p.012101-012101-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2424437 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Measurement of spin diffusion length in sputtered Ni films using a special exchange-biased spin valve geometry |
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