$Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction$

Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction

High-resolution x-ray diffraction measurements are used to fully characterize the strain state of relaxed highly mismatched GaAs films, grown on vicinal Si (001) substrates by molecular beam epitaxy. The nonuniformity of the misfit dislocation network at the Ga As ∕ Si (001) interface is studied by...

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Veröffentlicht in:	Journal of applied physics 2007-01, Vol.101 (1), p.013517-013517-6
Hauptverfasser:	Shalimov, Artem, Bąk-Misiuk, Jadwiga, Kaganer, Vladimir M., Calamiotou, Maria, Georgakilas, Alexandros
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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