Resonant tunneling magnetoresistance in coupled quantum wells
A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polari...
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| Veröffentlicht in: | Applied physics letters 2006-12, Vol.89 (24), p.242101-242101-3 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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