Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

The carrier dynamics of photoexcited electrons in the vicinity of the surface of ( N H 4 ) 2 S -passivated GaAs were studied via terahertz emission spectroscopy and optical-pump terahertz-probe spectroscopy. Terahertz emission spectroscopy measurements, coupled with Monte Carlo simulations of terahe...

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Veröffentlicht in:	Applied physics letters 2006-12, Vol.89 (23), p.232102-232102-3
Hauptverfasser:	Lloyd-Hughes, J., Merchant, S. K. E., Fu, L., Tan, H. H., Jagadish, C., Castro-Camus, E., Johnston, M. B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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