Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires
Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshol...
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| Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (22), p.223116-223116-3 |
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| container_end_page | 223116-3 |
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| container_issue | 22 |
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| container_title | Applied physics letters |
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| creator | Lee, Se-Ho Ko, Dong-Kyun Jung, Yeonwoong Agarwal, Ritesh |
| description | Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as
0.42
mA
for a
28
nm
nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale. |
| doi_str_mv | 10.1063/1.2397558 |
| format | Article |
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0.42
mA
for a
28
nm
nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2397558</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2006-11, Vol.89 (22), p.223116-223116-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-41fd47e9f3121a89dd7c3e808b253d138c624f126ae2cb461ebe6fce3b5ac9593</citedby><cites>FETCH-LOGICAL-c385t-41fd47e9f3121a89dd7c3e808b253d138c624f126ae2cb461ebe6fce3b5ac9593</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2397558$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,1561,4514,27931,27932,76392,76398</link.rule.ids></links><search><creatorcontrib>Lee, Se-Ho</creatorcontrib><creatorcontrib>Ko, Dong-Kyun</creatorcontrib><creatorcontrib>Jung, Yeonwoong</creatorcontrib><creatorcontrib>Agarwal, Ritesh</creatorcontrib><title>Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires</title><title>Applied physics letters</title><description>Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as
0.42
mA
for a
28
nm
nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAYhoMoOKcH_0GuHjrzJU2bXgQZOoWBB-c5pMlXF9nSkVTL_PW2bnjz9PHyPbzwPoRcA5sBK8QtzLioSinVCZkAK8tMAKhTMmGMiayoJJyTi5Q-hii5EBPiXv03Zg53GByGju7WJiHtognJd74NdIvbNu5p6n1n1z680xrX5su3kZrg6KbtaR8HcnjYzxiHikR9oAtcIQ0mtL2PmC7JWWM2Ca-Od0reHh9W86ds-bJ4nt8vMyuU7LIcGpeXWDUCOBhVOVdagYqpmkvhQChb8LwBXhjkts4LwBqLxqKopbGVrMSU3Bx6bWxTitjoXfRbE_camB71aNBHPQN7d2CT9Z0Zp_4Pj470nyP960j8ALlxb0k</recordid><startdate>20061127</startdate><enddate>20061127</enddate><creator>Lee, Se-Ho</creator><creator>Ko, Dong-Kyun</creator><creator>Jung, Yeonwoong</creator><creator>Agarwal, Ritesh</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20061127</creationdate><title>Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires</title><author>Lee, Se-Ho ; Ko, Dong-Kyun ; Jung, Yeonwoong ; Agarwal, Ritesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-41fd47e9f3121a89dd7c3e808b253d138c624f126ae2cb461ebe6fce3b5ac9593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Se-Ho</creatorcontrib><creatorcontrib>Ko, Dong-Kyun</creatorcontrib><creatorcontrib>Jung, Yeonwoong</creatorcontrib><creatorcontrib>Agarwal, Ritesh</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Se-Ho</au><au>Ko, Dong-Kyun</au><au>Jung, Yeonwoong</au><au>Agarwal, Ritesh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires</atitle><jtitle>Applied physics letters</jtitle><date>2006-11-27</date><risdate>2006</risdate><volume>89</volume><issue>22</issue><spage>223116</spage><epage>223116-3</epage><pages>223116-223116-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Synthesis and device characteristics of highly scalable GeTe nanowire-based phase transition memory are reported. The authors have demonstrated reversible phase transition memory switching behavior in GeTe nanowires, and obtained critical device parameters, such as write and erase currents, threshold voltage, and programming curves. The diameter dependence of memory switching behavior in GeTe nanowires was studied and a systematic reduction of writing currents with decreasing diameter was observed, with currents as low as
0.42
mA
for a
28
nm
nanowire. Results show that nanowires are very promising for scalable memory applications and for studying size-dependent phase transition mechanisms at the nanoscale.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2397558</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2006-11, Vol.89 (22), p.223116-223116-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Size-dependent phase transition memory switching behavior and low writing currents in GeTe nanowires |
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