Analysis of threshold voltage of short channel polycrystalline silicon thin-film transistors fabricated on large grains

Drain bias dependence of threshold voltages of short channel thin-film transistors (TFTs) fabricated on polycrystalline silicon (poly-Si) films with large grains has been investigated. The drain coefficient of the threshold voltage was found to be substantially larger in poly-Si TFTs than that in me...

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Veröffentlicht in:	Journal of applied physics 2006-12, Vol.100 (11)
Hauptverfasser:	Kawachi, Genshiro, Tsuboi, Shinzo, Okada, Takashi, Mitani, Masahiro, Matsumura, Masakiyo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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