Enhanced oxygen diffusion in highly doped p -type Czochralski silicon

The locking of dislocations by oxygen has been investigated experimentally in Czochralski silicon (Cz-Si) with different concentrations of shallow dopants. Specimens containing well-defined arrays of dislocation half-loops were subjected to isothermal anneals in the 350 - 550 ° C temperature range,...

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Veröffentlicht in:	Journal of applied physics 2006-11, Vol.100 (10), p.103531-103531-6
Hauptverfasser:	Murphy, J. D., Wilshaw, P. R., Pygall, B. C., Senkader, S., Falster, R. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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