Damascene and subtractive processing of narrow tungsten lines: Resistivity and size effect
Narrow W lines with linewidths down to ~40 nm were manufactured by both damascene and subtractive processing. The dependence of the resistivity on the linewidth was studied for different deposition temperatures of the W layer. Generally, the resistivity decreases for decreasing deposition temperatur...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2006-11, Vol.100 (9), p.094325-094325-4 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!