Influence of surface adsorption in improving ultrashallow junction formation

The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.