Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 16 to 2 × 10 19 cm − 3 . The lifetime has been found to decrease from 2.5 ps , at low density, to 0.35 ps , at the highest den...

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Veröffentlicht in:	Applied physics letters 2006-09, Vol.89 (11), p.112111-112111-3
Hauptverfasser:	Tsen, K. T., Kiang, Juliann G., Ferry, D. K., Morkoç, H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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