Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

The authors report on the electrical reliabilities of poly-4-vinyl phenol (PVP) and SiO2 gate dielectrics for pentacene thin-film transistors (TFTs). SiO2 films were grown by dry oxidation and PVP films were prepared by spin coating and subsequent cross-linking at 175°C for 15min. The pentacene TFTs...

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Veröffentlicht in:	Applied physics letters 2006-08, Vol.89 (9)
Hauptverfasser:	Hwang, D. K., Lee, Kimoon, Kim, Jae Hoon, Im, Seongil, Park, Ji Hoon, Kim, Eugene
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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