Structural properties of Ge2Sb2Te5 thin films by metal organic chemical vapor deposition for phase change memory applications

Ge 2 Sb 2 Te 5 (GST) films were deposited on TiN(50nm)∕SiO2∕Si substrates and trench structures of TiAlN(100nm)∕Si with various deposition parameters by metal organic chemical vapor deposition (MOCVD). Hexagonal GST films were deposited at temperatures of 330–370°C, deposition pressure of 40Torr, bubbling temperatures of Ge(50°C), Sb(10°C), and Te(30°C) precursors. Germanium incorporation into GST films by MOCVD is sensitively influenced by deposition parameters such as deposition pressure, deposition temperature, and bubbling temperatures of precursors. Trench structures with a diameter of 120nm and a height of 200nm are completely filled by GST MOCVD.