Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems

Photoluminescence measurements are used to investigate the light emission of silicon nanocrystals prepared by Si+ implantation into SiO2∕Si layered structures. Strong variations of the luminescence intensity are observed as a function of the SiO2 thickness, for laser excitations at 405 and 488nm. Th...

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Veröffentlicht in:	Applied physics letters 2006-07, Vol.89 (3)
Hauptverfasser:	Barba, D., Martin, F., Dahmoune, C., Ross, G. G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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