Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study

Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study

InSb thin films were grown on Si (001) substrate via both conventional one-step growth and two-step growth methods by molecular beam epitaxy. The effect of two-step growth was investigated by transmission electron microscopy. A lot of planar defects and surface steps were observed in the InSb thin f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2006-07, Vol.89 (3)
Hauptverfasser: Kim, Y. H., Lee, J. Y., Noh, Y. G., Kim, M. D., Kwon, Y. J., Oh, J. E., Gronsky, R.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 3
container_start_page
container_title Applied physics letters
container_volume 89
creator Kim, Y. H.
Lee, J. Y.
Noh, Y. G.
Kim, M. D.
Kwon, Y. J.
Oh, J. E.
Gronsky, R.
description InSb thin films were grown on Si (001) substrate via both conventional one-step growth and two-step growth methods by molecular beam epitaxy. The effect of two-step growth was investigated by transmission electron microscopy. A lot of planar defects and surface steps were observed in the InSb thin film directly grown on buffer layer. The crystalline quality of the InSb thin film was improved when it was grown via two-step growth. The low-temperature InSb initiation layer of two-step growth relieved a misfit strain by generating 90° misfit dislocations and obstructed the propagation of defects by trapping at the interface.
doi_str_mv 10.1063/1.2228028
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2228028</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2228028</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-f7b15da7fac1bea329f67b942560c4c9190d5e87810e1725d66096f9e0923ebc3</originalsourceid><addsrcrecordid>eNo9kM1KAzEUhYMoWKsL3yBLu5h6b9L5ibtSqhYKLqrrIZO5sZH5KUlK7SP41k6xuDrncD_ugcPYPcIUIZOPOBVCFCCKCzZCyPNEIhaXbAQAMslUitfsJoSvIaZCyhH7WVpLJvLe8njokxBpxz99f4hb3nc8bolvKZLvaeei_na6-b9avuo21YC4jlvXtCd-4_gDAE542Fcheh3pic_5YLrQuhDcgFAz1PnBtM74Pph-d-Qh7uvjLbuyugl0d9Yx-3hevi9ek_Xby2oxXydGCBUTm1eY1jq32mBFWgpls7xSM5FmYGZGoYI6pSIvEAhzkdZZBiqzikAJSZWRYzb5-3uqD55sufOu1f5YIpSnDUsszxvKX3A4ZOY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Kim, Y. H. ; Lee, J. Y. ; Noh, Y. G. ; Kim, M. D. ; Kwon, Y. J. ; Oh, J. E. ; Gronsky, R.</creator><creatorcontrib>Kim, Y. H. ; Lee, J. Y. ; Noh, Y. G. ; Kim, M. D. ; Kwon, Y. J. ; Oh, J. E. ; Gronsky, R.</creatorcontrib><description>InSb thin films were grown on Si (001) substrate via both conventional one-step growth and two-step growth methods by molecular beam epitaxy. The effect of two-step growth was investigated by transmission electron microscopy. A lot of planar defects and surface steps were observed in the InSb thin film directly grown on buffer layer. The crystalline quality of the InSb thin film was improved when it was grown via two-step growth. The low-temperature InSb initiation layer of two-step growth relieved a misfit strain by generating 90° misfit dislocations and obstructed the propagation of defects by trapping at the interface.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2228028</identifier><language>eng</language><ispartof>Applied physics letters, 2006-07, Vol.89 (3)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-f7b15da7fac1bea329f67b942560c4c9190d5e87810e1725d66096f9e0923ebc3</citedby><cites>FETCH-LOGICAL-c229t-f7b15da7fac1bea329f67b942560c4c9190d5e87810e1725d66096f9e0923ebc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Y. H.</creatorcontrib><creatorcontrib>Lee, J. Y.</creatorcontrib><creatorcontrib>Noh, Y. G.</creatorcontrib><creatorcontrib>Kim, M. D.</creatorcontrib><creatorcontrib>Kwon, Y. J.</creatorcontrib><creatorcontrib>Oh, J. E.</creatorcontrib><creatorcontrib>Gronsky, R.</creatorcontrib><title>Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study</title><title>Applied physics letters</title><description>InSb thin films were grown on Si (001) substrate via both conventional one-step growth and two-step growth methods by molecular beam epitaxy. The effect of two-step growth was investigated by transmission electron microscopy. A lot of planar defects and surface steps were observed in the InSb thin film directly grown on buffer layer. The crystalline quality of the InSb thin film was improved when it was grown via two-step growth. The low-temperature InSb initiation layer of two-step growth relieved a misfit strain by generating 90° misfit dislocations and obstructed the propagation of defects by trapping at the interface.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KAzEUhYMoWKsL3yBLu5h6b9L5ibtSqhYKLqrrIZO5sZH5KUlK7SP41k6xuDrncD_ugcPYPcIUIZOPOBVCFCCKCzZCyPNEIhaXbAQAMslUitfsJoSvIaZCyhH7WVpLJvLe8njokxBpxz99f4hb3nc8bolvKZLvaeei_na6-b9avuo21YC4jlvXtCd-4_gDAE542Fcheh3pic_5YLrQuhDcgFAz1PnBtM74Pph-d-Qh7uvjLbuyugl0d9Yx-3hevi9ek_Xby2oxXydGCBUTm1eY1jq32mBFWgpls7xSM5FmYGZGoYI6pSIvEAhzkdZZBiqzikAJSZWRYzb5-3uqD55sufOu1f5YIpSnDUsszxvKX3A4ZOY</recordid><startdate>20060717</startdate><enddate>20060717</enddate><creator>Kim, Y. H.</creator><creator>Lee, J. Y.</creator><creator>Noh, Y. G.</creator><creator>Kim, M. D.</creator><creator>Kwon, Y. J.</creator><creator>Oh, J. E.</creator><creator>Gronsky, R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20060717</creationdate><title>Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study</title><author>Kim, Y. H. ; Lee, J. Y. ; Noh, Y. G. ; Kim, M. D. ; Kwon, Y. J. ; Oh, J. E. ; Gronsky, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-f7b15da7fac1bea329f67b942560c4c9190d5e87810e1725d66096f9e0923ebc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Y. H.</creatorcontrib><creatorcontrib>Lee, J. Y.</creatorcontrib><creatorcontrib>Noh, Y. G.</creatorcontrib><creatorcontrib>Kim, M. D.</creatorcontrib><creatorcontrib>Kwon, Y. J.</creatorcontrib><creatorcontrib>Oh, J. E.</creatorcontrib><creatorcontrib>Gronsky, R.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Y. H.</au><au>Lee, J. Y.</au><au>Noh, Y. G.</au><au>Kim, M. D.</au><au>Kwon, Y. J.</au><au>Oh, J. E.</au><au>Gronsky, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study</atitle><jtitle>Applied physics letters</jtitle><date>2006-07-17</date><risdate>2006</risdate><volume>89</volume><issue>3</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>InSb thin films were grown on Si (001) substrate via both conventional one-step growth and two-step growth methods by molecular beam epitaxy. The effect of two-step growth was investigated by transmission electron microscopy. A lot of planar defects and surface steps were observed in the InSb thin film directly grown on buffer layer. The crystalline quality of the InSb thin film was improved when it was grown via two-step growth. The low-temperature InSb initiation layer of two-step growth relieved a misfit strain by generating 90° misfit dislocations and obstructed the propagation of defects by trapping at the interface.</abstract><doi>10.1063/1.2228028</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2006-07, Vol.89 (3)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_2228028
source AIP Journals Complete; AIP Digital Archive
title Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A16%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20two-step%20growth%20on%20the%20heteroepitaxial%20growth%20of%20InSb%20thin%20film%20on%20Si%20(001)%20substrate:%20A%20transmission%20electron%20microscopy%20study&rft.jtitle=Applied%20physics%20letters&rft.au=Kim,%20Y.%20H.&rft.date=2006-07-17&rft.volume=89&rft.issue=3&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2228028&rft_dat=%3Ccrossref%3E10_1063_1_2228028%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true