Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer

The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxid...

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Veröffentlicht in:	Applied physics letters 2006-07, Vol.89 (5)
Hauptverfasser:	Tu, Chun-Hao, Chang, Ting-Chang, Liu, Po-Tsun, Liu, Hsin-Chou, Tsai, Chia-Chou, Chang, Li-Ting, Tseng, Tseung-Yuan, Sze, Simon M., Chang, Chun-Yen
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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