Carrier dynamics in submonolayer InGaAs∕GaAs quantum dots

Carrier dynamics in submonolayer InGaAs∕GaAs quantum dots

Carrier dynamics of submonolayer InGaAs∕GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon mod...

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Veröffentlicht in:Applied physics letters 2006-07, Vol.89 (1)
Hauptverfasser: Xu, Zhangcheng, Zhang, Yating, Hvam, Jørn M., Xu, Jingjun, Chen, Xiaoshuang, Lu, Wei
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container_title Applied physics letters
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creator Xu, Zhangcheng
Zhang, Yating
Hvam, Jørn M.
Xu, Jingjun
Chen, Xiaoshuang
Lu, Wei
description Carrier dynamics of submonolayer InGaAs∕GaAs quantum dots (QDs) were studied by microphotoluminecence (MPL), selectively excited photoluminescence (SEPL), and time-resolved photoluminescence (TRPL). MPL and SEPL show the coexistence of localized and delocalized states, and different local phonon modes. TRPL reveals shorter recombination lifetimes and longer capture times for the QDs with higher emission energy. This suggests that the smallest SML QDs are formed by perfectly vertically correlated two-dimensional InAs islands, having the highest In content and the lowest emission energy, while a slight deviation from the perfectly vertical correlation produces larger QDs with lower In content and higher emission energy.
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title Carrier dynamics in submonolayer InGaAs∕GaAs quantum dots
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