Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers

Hydrogenation by high temperature rapid annealing of SiNx:H is found to be very effective on the defects responsible for the carrier trapping effect in multicrystalline silicon. The passivation effect is reversible and is annihilated by a long thermal annealing. As for the passivation of deep, lifet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2006-07, Vol.89 (1)
Hauptverfasser:	Dekkers, H. F. W., Carnel, L., Beaucarne, G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!