Enhanced hole transport in poly(p-phenylene vinylene) planar metal-polymer-metal devices
In planar metal-poly(p-phenylene vinylene) (PPV)-metal devices the experimental current is five to six orders of magnitude larger as compared to the expected space-charge limited current. Comparing these measurements with field-effect transistors demonstrates that the enhanced current originates fro...
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Veröffentlicht in: | Journal of applied physics 2006-05, Vol.99 (10) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In planar metal-poly(p-phenylene vinylene) (PPV)-metal devices the experimental current is five to six orders of magnitude larger as compared to the expected space-charge limited current. Comparing these measurements with field-effect transistors demonstrates that the enhanced current originates from a high surface charge carrier density at the polymer/substrate interface. This surface charge is found to be only weakly dependent on the substrate, device geometry, and chemical treatment of the substrate. The presence of such a conducting channel due to charging of the surface obscures the intrinsic in-plane conducting properties of PPV. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.2202198 |