Enhanced hole transport in poly(p-phenylene vinylene) planar metal-polymer-metal devices

In planar metal-poly(p-phenylene vinylene) (PPV)-metal devices the experimental current is five to six orders of magnitude larger as compared to the expected space-charge limited current. Comparing these measurements with field-effect transistors demonstrates that the enhanced current originates fro...

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Veröffentlicht in:Journal of applied physics 2006-05, Vol.99 (10)
Hauptverfasser: Tanase, Cristina, Blom, Paul W. M., Mulder, Minte, de Leeuw, Dago M.
Format: Artikel
Sprache:eng
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Zusammenfassung:In planar metal-poly(p-phenylene vinylene) (PPV)-metal devices the experimental current is five to six orders of magnitude larger as compared to the expected space-charge limited current. Comparing these measurements with field-effect transistors demonstrates that the enhanced current originates from a high surface charge carrier density at the polymer/substrate interface. This surface charge is found to be only weakly dependent on the substrate, device geometry, and chemical treatment of the substrate. The presence of such a conducting channel due to charging of the surface obscures the intrinsic in-plane conducting properties of PPV.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2202198