Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

Gadolinium scandate thin films deposited on silicon substrates using electron beam evaporation were investigated. Measurements with Rutherford backscattering spectrometry, high temperature x-ray diffraction, x-ray reflectometry, transmission electron microscopy, and atomic force microscopy were perf...

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Veröffentlicht in:	Applied physics letters 2006-04, Vol.88 (17), p.172901-172901-3
Hauptverfasser:	Wagner, M., Heeg, T., Schubert, J., Lenk, St, Mantl, S., Zhao, C., Caymax, M., De Gendt, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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