Room-temperature short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers
We discuss the possible limitations on realizing short-wavelength GaInAs∕AlAsSb quantum-cascade lasers and consequently demonstrate room-temperature (Tmax=310K) short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers based on triple-well vertical-transition active regions. For a device w...
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Veröffentlicht in: | Applied physics letters 2006-03, Vol.88 (12) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We discuss the possible limitations on realizing short-wavelength GaInAs∕AlAsSb quantum-cascade lasers and consequently demonstrate room-temperature (Tmax=310K) short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers based on triple-well vertical-transition active regions. For a device with the size of 14μm×3.0mm with as-cleaved facets, the maximum peak powers per facet are around 31mW at 300K and 17mW at 310K. The characteristic temperature of the laser is 170K in the temperature range between 220 and 310K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.2190455 |