Formation of flat, relaxed Si1−xGex alloys on Si(001) without buffer layers
Atomically flat, fully strained Si1−xGex layers with thicknesses ranging from 40 to 240nm were grown on Si(001) at 450°C by ultrahigh-vacuum chemical vapor deposition and subjected to annealing at 1000°C for 20min to induce relaxation. In order to minimize surface diffusion during annealing and ther...
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| Veröffentlicht in: | Applied physics letters 2006-03, Vol.88 (12) |
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| container_title | Applied physics letters |
| container_volume | 88 |
| creator | Hong, S. Kim, H.-W. Bae, D. K. Song, S. C. Lee, G.-D. Yoon, E. Kim, C. S. Foo, Y. L. Greene, J. E. |
| description | Atomically flat, fully strained Si1−xGex layers with thicknesses ranging from 40 to 240nm were grown on Si(001) at 450°C by ultrahigh-vacuum chemical vapor deposition and subjected to annealing at 1000°C for 20min to induce relaxation. In order to minimize surface diffusion during annealing and thereby inhibit strain-induced roughening in favor of misfit dislocation formation, SiO2 capping layers are deposited prior to annealing. The overall process results in smooth, relaxed alloy layers without the necessity of using several-μm-thick compositionally graded buffer layers. |
| doi_str_mv | 10.1063/1.2188043 |
| format | Article |
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The overall process results in smooth, relaxed alloy layers without the necessity of using several-μm-thick compositionally graded buffer layers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2188043</identifier><language>eng</language><ispartof>Applied physics letters, 2006-03, Vol.88 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-2816f4deb1c012d6e78993e8a6bd4454c9efb61f892463b13bbe11ef210483293</citedby><cites>FETCH-LOGICAL-c159t-2816f4deb1c012d6e78993e8a6bd4454c9efb61f892463b13bbe11ef210483293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hong, S.</creatorcontrib><creatorcontrib>Kim, H.-W.</creatorcontrib><creatorcontrib>Bae, D. 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In order to minimize surface diffusion during annealing and thereby inhibit strain-induced roughening in favor of misfit dislocation formation, SiO2 capping layers are deposited prior to annealing. The overall process results in smooth, relaxed alloy layers without the necessity of using several-μm-thick compositionally graded buffer layers.</abstract><doi>10.1063/1.2188043</doi></addata></record> |
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| ispartof | Applied physics letters, 2006-03, Vol.88 (12) |
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| source | AIP Journals Complete; AIP Digital Archive |
| title | Formation of flat, relaxed Si1−xGex alloys on Si(001) without buffer layers |
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