Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p - n junctions by in situ annealing

Low temperature ( 200 - 600 ° C ) annealing in the transmission electron microscope (TEM) is used to provide a significant noise reduction in phase images of focused-ion-beam-milled GaAs and Si p - n junctions recorded using off-axis electron holography, as well as increasing the measured phase shif...

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Veröffentlicht in:	Applied physics letters 2006-02, Vol.88 (6), p.063510-063510-3
Hauptverfasser:	Cooper, David, Twitchett, Alison C., Somodi, Philippa K., Midgley, Paul A., Dunin-Borkowski, Rafal E., Farrer, Ian, Ritchie, David A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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