Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO

This letter reports the metallic conductivity in Ga:ZnO system at room temperature and a metal-semiconductor transition (MST) behavior at low temperatures. Zn 0.95 Ga 0.05 O films, deposited by pulsed laser deposition in the pressure range of ∼ 10 − 2 Torr of oxygen, were found to be crystalline and...

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Veröffentlicht in:	Applied physics letters 2006-01, Vol.88 (3), p.032106-032106-3
Hauptverfasser:	Bhosle, V., Tiwari, A., Narayan, J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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