Ion-beam lithography by use of highly charged Ar-ion beam

In order to fabricate a nanoscale three-dimensional (3D) structure by using the ion-beam lithography (IBL), we tried to control the etching rate and the etching depth by means of the charge state, the beam energy, and the fluence of the ion beam. Ar-ion beams with E = 90 keV and 80 - 400 keV were ir...

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Veröffentlicht in:	Review of scientific instruments 2006-03, Vol.77 (3), p.03C111-03C111-3
Hauptverfasser:	Momota, Sadao, Iwamitsu, Shingo, Goto, Shougo, Nojiri, Yoichi, Taniguchi, Jun, Miyamoto, Iwao, Ohno, Hirohisa, Morita, Noboru, Kawasegi, Noritaka
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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