Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

Current collapse in AlGaN∕GaN field-effect transistors subjected high rf drive levels and/or to bias stresses is attributed to the presence of surface trapping levels whose nature remains to be identified. Although current collapse manifestations can be alleviated with various surface films, the exa...

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Veröffentlicht in:	Applied physics letters 2006-01, Vol.88 (1)
Hauptverfasser:	DiSanto, D. W., Sun, H. F., Bolognesi, C. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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