Structural, morphological, and electrical characterization of heteroepitaxial ZnO thin films deposited on Si (100) by pulsed laser deposition: Effect of annealing ( 800 ° C ) in air

Pulsed laser deposition technique was used for growing thin films of ZnO on Si (100) substrate held at different temperatures ( T s ) . All the as-deposited films have shown a preferential c -axis orientation associated with varying grain size as a function of T s ranging from 100 to 600 ° C . Curre...

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Veröffentlicht in:	Journal of applied physics 2006-01, Vol.99 (1), p.014907-014907-7
Hauptverfasser:	Jejurikar, S. M., Banpurkar, A. G., Limaye, A. V., Date, S. K., Patil, S. I., Adhi, K. P., Misra, P., Kukreja, L. M., Bathe, Ravi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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