Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers

We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switching current density of 2–3×106A∕cm2. The switching data are compared to those obtained on similar MTJ nanostructures w...

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Veröffentlicht in:	Applied physics letters 2005-12, Vol.87 (23)
Hauptverfasser:	Diao, Zhitao, Apalkov, Dmytro, Pakala, Mahendra, Ding, Yunfei, Panchula, Alex, Huai, Yiming
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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