Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration

A kinetic Monte Carlo simulation of the electromigration-induced void migration behavior of three-dimensional nanovoids at the interface between a metal conductor and its dielectric overlayer is presented. Major stages of the recently observed failure mode of surface void migration and accumulation...

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Veröffentlicht in:Journal of applied physics 2005-11, Vol.98 (10)
Hauptverfasser: Zaporozhets, T. V., Gusak, A. M., Tu, K. N., Mhaisalkar, S. G.
Format: Artikel
Sprache:eng
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