Synthesis and postgrowth doping of silicon nanowires
High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fa...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2005-11, Vol.87 (19), p.193104-193104-3 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 193104-3 |
|---|---|
| container_issue | 19 |
| container_start_page | 193104 |
| container_title | Applied physics letters |
| container_volume | 87 |
| creator | Byon, K. Tham, D. Fischer, J. E. Johnson, A. T. |
| description | High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were
p
-channel with channel mobilities
1
-
10
cm
2
V
−
1
s
−
1
. Postgrowth vapor doping with bismuth converted these to
n
-channel behavior. |
| doi_str_mv | 10.1063/1.2128070 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_2128070</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-3b32667060b46c8bde66cc3cefd2f4794f0e803fe5f28c625f1002a1cb1725663</originalsourceid><addsrcrecordid>eNp1z0FLAzEQhuEgCq7Vg_8gVw9bZ5JNsr0IUrQKBQ_qOWSzSRupyZIslP57V1q8eRoGXj54CLlFmCNIfo9zhqwFBWekQlCq5ojtOakAgNdyIfCSXJXyNb2CcV6R5v0Qx60roVATezqkMm5y2o9b2qchxA1NnpawCzZFGk1M-5BduSYX3uyKuzndGfl8fvpYvtTrt9Xr8nFdW96KseYdZ1IqkNA10rZd76S0llvne-YbtWg8uBa4d8Kz1komPAIwg7ZDxYSUfEbujrs2p1Ky83rI4dvkg0bQv1yN-sSd2odjW2wYzRhS_D_-M-vJrI9m_gPdGVyU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Synthesis and postgrowth doping of silicon nanowires</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Byon, K. ; Tham, D. ; Fischer, J. E. ; Johnson, A. T.</creator><creatorcontrib>Byon, K. ; Tham, D. ; Fischer, J. E. ; Johnson, A. T.</creatorcontrib><description>High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were
p
-channel with channel mobilities
1
-
10
cm
2
V
−
1
s
−
1
. Postgrowth vapor doping with bismuth converted these to
n
-channel behavior.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2128070</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-11, Vol.87 (19), p.193104-193104-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-3b32667060b46c8bde66cc3cefd2f4794f0e803fe5f28c625f1002a1cb1725663</citedby><cites>FETCH-LOGICAL-c385t-3b32667060b46c8bde66cc3cefd2f4794f0e803fe5f28c625f1002a1cb1725663</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2128070$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Byon, K.</creatorcontrib><creatorcontrib>Tham, D.</creatorcontrib><creatorcontrib>Fischer, J. E.</creatorcontrib><creatorcontrib>Johnson, A. T.</creatorcontrib><title>Synthesis and postgrowth doping of silicon nanowires</title><title>Applied physics letters</title><description>High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were
p
-channel with channel mobilities
1
-
10
cm
2
V
−
1
s
−
1
. Postgrowth vapor doping with bismuth converted these to
n
-channel behavior.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1z0FLAzEQhuEgCq7Vg_8gVw9bZ5JNsr0IUrQKBQ_qOWSzSRupyZIslP57V1q8eRoGXj54CLlFmCNIfo9zhqwFBWekQlCq5ojtOakAgNdyIfCSXJXyNb2CcV6R5v0Qx60roVATezqkMm5y2o9b2qchxA1NnpawCzZFGk1M-5BduSYX3uyKuzndGfl8fvpYvtTrt9Xr8nFdW96KseYdZ1IqkNA10rZd76S0llvne-YbtWg8uBa4d8Kz1komPAIwg7ZDxYSUfEbujrs2p1Ky83rI4dvkg0bQv1yN-sSd2odjW2wYzRhS_D_-M-vJrI9m_gPdGVyU</recordid><startdate>20051107</startdate><enddate>20051107</enddate><creator>Byon, K.</creator><creator>Tham, D.</creator><creator>Fischer, J. E.</creator><creator>Johnson, A. T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20051107</creationdate><title>Synthesis and postgrowth doping of silicon nanowires</title><author>Byon, K. ; Tham, D. ; Fischer, J. E. ; Johnson, A. T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-3b32667060b46c8bde66cc3cefd2f4794f0e803fe5f28c625f1002a1cb1725663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Byon, K.</creatorcontrib><creatorcontrib>Tham, D.</creatorcontrib><creatorcontrib>Fischer, J. E.</creatorcontrib><creatorcontrib>Johnson, A. T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Byon, K.</au><au>Tham, D.</au><au>Fischer, J. E.</au><au>Johnson, A. T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis and postgrowth doping of silicon nanowires</atitle><jtitle>Applied physics letters</jtitle><date>2005-11-07</date><risdate>2005</risdate><volume>87</volume><issue>19</issue><spage>193104</spage><epage>193104-3</epage><pages>193104-193104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were
p
-channel with channel mobilities
1
-
10
cm
2
V
−
1
s
−
1
. Postgrowth vapor doping with bismuth converted these to
n
-channel behavior.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2128070</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-11, Vol.87 (19), p.193104-193104-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2128070 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Synthesis and postgrowth doping of silicon nanowires |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T05%3A36%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20and%20postgrowth%20doping%20of%20silicon%20nanowires&rft.jtitle=Applied%20physics%20letters&rft.au=Byon,%20K.&rft.date=2005-11-07&rft.volume=87&rft.issue=19&rft.spage=193104&rft.epage=193104-3&rft.pages=193104-193104-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2128070&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |