Intersubband photoconductivity at 1.6 μ m using a strain-compensated AlN ∕ GaN superlattice

We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN ∕ GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poi...

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Veröffentlicht in:	Applied physics letters 2005-11, Vol.87 (19), p.191102-191102-3
Hauptverfasser:	Baumann, E., Giorgetta, F. R., Hofstetter, D., Lu, H., Chen, X., Schaff, W. J., Eastman, L. F., Golka, S., Schrenk, W., Strasser, G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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