Intersubband photoconductivity at 1.6 μ m using a strain-compensated AlN ∕ GaN superlattice
We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN ∕ GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poi...
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| Veröffentlicht in: | Applied physics letters 2005-11, Vol.87 (19), p.191102-191102-3 |
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| container_end_page | 191102-3 |
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| container_issue | 19 |
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| container_title | Applied physics letters |
| container_volume | 87 |
| creator | Baumann, E. Giorgetta, F. R. Hofstetter, D. Lu, H. Chen, X. Schaff, W. J. Eastman, L. F. Golka, S. Schrenk, W. Strasser, G. |
| description | We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular
AlN
∕
GaN
superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around
6300
cm
−
1
which corresponds to
1.6
μ
m
. |
| doi_str_mv | 10.1063/1.2126130 |
| format | Article |
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AlN
∕
GaN
superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around
6300
cm
−
1
which corresponds to
1.6
μ
m
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2126130</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-11, Vol.87 (19), p.191102-191102-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-2a33ef42f97a4a97a51396c5df9120dcca4dc1d39d0e48a654e15dd67fd2e3993</citedby><cites>FETCH-LOGICAL-c284t-2a33ef42f97a4a97a51396c5df9120dcca4dc1d39d0e48a654e15dd67fd2e3993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2126130$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,1560,4513,27929,27930,76389,76395</link.rule.ids></links><search><creatorcontrib>Baumann, E.</creatorcontrib><creatorcontrib>Giorgetta, F. R.</creatorcontrib><creatorcontrib>Hofstetter, D.</creatorcontrib><creatorcontrib>Lu, H.</creatorcontrib><creatorcontrib>Chen, X.</creatorcontrib><creatorcontrib>Schaff, W. J.</creatorcontrib><creatorcontrib>Eastman, L. F.</creatorcontrib><creatorcontrib>Golka, S.</creatorcontrib><creatorcontrib>Schrenk, W.</creatorcontrib><creatorcontrib>Strasser, G.</creatorcontrib><title>Intersubband photoconductivity at 1.6 μ m using a strain-compensated AlN ∕ GaN superlattice</title><title>Applied physics letters</title><description>We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular
AlN
∕
GaN
superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around
6300
cm
−
1
which corresponds to
1.6
μ
m
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AlN
∕
GaN
superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around
6300
cm
−
1
which corresponds to
1.6
μ
m
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2126130</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-11, Vol.87 (19), p.191102-191102-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_2126130 |
| source | AIP Journals Complete; AIP Digital Archive |
| title | Intersubband photoconductivity at 1.6 μ m using a strain-compensated AlN ∕ GaN superlattice |
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