Gallium nitride surface quantum wells

Surface quantum-well emission has been observed from GaN-capped Al Ga N ∕ Ga N heterostructures grown by metalorganic chemical vapor deposition. The GaN cap, which forms the surface quantum well, is confined on one side by the vacuum level and on the other side by the AlGaN barrier layer. Photolumin...

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Veröffentlicht in:	Applied physics letters 2005-11, Vol.87 (19), p.192117-192117-3
Hauptverfasser:	Muth, J. F., Zhang, X., Cai, A., Fothergill, D., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., Linthicum, K. J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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